Ch-technology TBSD__210H Manuel d'utilisateur télécharger pdf (Page 4)

TBSD__210H

Phase Control Thyristo

Powerex, Inc., 173 Pavilion Ln, Youngwood, PA 15697-1800 (724)925-7272 www.pwrx.com 2115 Amperes 4500 Volts

Electrical Characteristics, Tj=25°C unless otherwise specified

Rating

Characteristic Symbol Test Conditions min typ max Units

Repetitive Peak Forward

Leakage Current

DRM

Tj=125°C, V

DRM

=Rated

250 ma

Repetitive Peak Reverse

Leakage Current

RRM

Tj=125°C, V

RRM

=Rated

250 ma

Peak On-State Voltage

Tj=125°C, I

=2000

1.70 V

Model, Low Level V

Tj=125°C 1.130 V

VTM = V

+ r•I

15% I

- π•I

2.75E-04 Ω

Model, High Level V

Tj=125°C 1.274 V

VTM = V

+ r•I

π•I

- I

TSM

2.46E-04 Ω

Model,

4-Term A Tj=125°C

0.468

= A + B•Ln(I

) +

15%I

- I

TSM

0.112

C•(I

) + D•(I

)

0.000249

-0.00253

Turn-On Delay Time

= 0.5•V

DRM

3.5 us

Gate Drive: 40V - 20Ω

Turn-Off Time tq Tj=125°C 600 us

dv/dt = 20V/us to 80%

DRM

Reverse Recovery Current

R(Rec)

Tj=125°C 1500A -10A/us A

Reverse Recovery Charge

uCoul

dv/dt

(Crit)

dv/dt Tj=125°C Exp. Waveform 1000 V/us

=80% Rated

Gate Trigger Current

Tj=25°C V

= 12V

30 150 250 ma

Gate Trigger Voltage

0.8 2.0 4.0 V

Peak Reverse Gate Voltage

GRM

Thermal Characteristics

Rating

Characteristic Symbol Test Conditions min typ max Units

Thermal Resistance

Junction to Case

RΘ

Double side cooled 0.009 0.010 °C/Watt

Case to Sink

RΘ

Double side cooled 0.0015 0.002 °C/Watt

Thermal Impedance Model

ZΘ

Double side cooled

ZΘ

(t) =

Σ(A(N)•(1-exp(-t

Tau(N))))

where: N = 12 3 4

A(N) = 1.13E-04 7.51E-04 3.53E-03 5.61E-03

Tau(N) = 6.54E-04 1.48E-02 1.89E-01 1.20E+00

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