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Document Number: 93678
2 Revision: 15-May-08
ST333C..C Series
Vishay High Power Products
Inverter Grade Thyristors
(Hockey PUK Version), 720 A
CURRENT CARRYING CAPABILITY
FREQUENCY UNITS
50 Hz 1630 1420 2520 2260 7610 6820
A
400 Hz 1630 1390 2670 2330 4080 3600
1000 Hz 1350 1090 2440 2120 2420 2100
2500 Hz 720 550 1450 1220 1230 1027
Recovery voltage V
r
50 50 50
V
Voltage before turn-on V
d
V
DRM
V
DRM
V
DRM
Rise of on-state current dI/dt 50 - - A/µs
Heatsink temperature 40 55 40 55 40 55 °C
Equivalent values for RC circuit 10/0.47 10/0.47 10/0.47 Ω/µF
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at heatsink temperature
I
T(AV)
180° conduction, half sine wave
Double side (single side) cooled
720 (350) A
55 (75) °C
Maximum RMS on-state current I
T(RMS)
DC at 25 °C heatsink temperature double side cooled 1435
A
Maximum peak, one half cycle,
non-repetitive surge current
I
TSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
11 000
t = 8.3 ms 11 500
t = 10 ms
100 % V
RRM
reapplied
9250
t = 8.3 ms 9700
Maximum I
2
t for fusing I
2
t
t = 10 ms
No voltage
reapplied
605
kA
2
s
t = 8.3 ms 553
t = 10 ms
100 % V
RRM
reapplied
428
t = 8.3 ms 391
Maximum I
2
√t for fusing I
2
√t t = 0.1 to 10 ms, no voltage reapplied 6050 kA
2
√s
Maximum peak on-state voltage V
TM
I
TM
= 1810 A, T
J
= T
J
maximum, t
p
= 10 ms sine wave pulse 1.96
VLow level value of threshold voltage V
T(TO)1
(16.7 % x π x I
T(AV)
< I < π x I
T(AV)
), T
J
= T
J
maximum 0.91
High level value of threshold voltage V
T(TO)2
(I > π x I
T(AV)
), T
J
= T
J
maximum 0.93
Low level value of forward slope resistance r
t1
(16.7 % x π x I
T(AV)
< I < π x I
T(AV)
), T
J
= T
J
maximum 0.58
mΩ
High level value of forward slope resistance r
t2
(I > π x I
T(AV)
), T
J
= T
J
maximum 0.58
Maximum holding current I
H
T
J
= 25 °C, I
T
> 30 A 600
mA
Typical latching current I
L
T
J
= 25 °C, V
A
= 12 V, R
a
= 6 Ω, I
G
= 1 A 1000
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS
VALUES
UNITS
MIN. MAX.
Maximum non-repetitive rate of rise
of turned on current
dI/dt T
J
= T
J
maximum, V
DRM
= Rated V
DRM
; I
TM
= 2 x dI/dt 1000 A/µs
Typical delay time t
d
T
J
= 25 °C, V
DM
= Rated V
DRM
, I
TM
= 50 A DC, t
p
= 1 µs
Resistive load, gate pulse: 10 V, 5 Ω source
1.1
µs
Maximum turn-off time t
q
T
J
= T
J
maximum,
I
TM
= 550 A, commutating dI/dt = 40 A/µs
V
R
= 50 V, t
p
= 500 µs, dV/dt: See table in device code
10 30
180° el
I
TM
180° el
I
TM
100 µs
I
TM
(5 pages)
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