Ch-technology RM1200DB-66S Manuel d'utilisateur télécharger pdf (Page 3)

MITSUBISHI ELECTRIC CORPORATION

HIGH VOLTAGE DIODE MODULE

HVM-2019

(HV-SETSU)

PAGE

2 / 10

6. Maximum Ratings

Item Symbol Conditions Ratings Unit

6.1 Repetitive peak reverse voltage V

RRM

= 25 °C 3300 V

6.2 Non-repetitive peak reverse

voltage

RSM

= 25 °C 3300 V

6.3 Reverse DC voltage V

R(DC)

= 25 °C 2200 V

6.4 DC forward current I

= 25 °C 1200 A

6.5 Surge forward current I

FSM

= 25 °C start, t

= 8.3 ms

Half sign wave

9600 A

6.6 Surge current load integral I

= 25 °C start, t

= 8.3 ms

Half sign wave

384 kA

6.7 Isolation voltage V

iso

Charged part to the baseplate

RMS sinusoidal, 60Hz 1min.

6000 V

6.8 Junction temperature T

— −40 ~ +150 °C

6.9 Storage temperature T

stg

— −40 ~ +125 °C

6.10 Operating temperature T

— −40 ~ +125 °C

6.11 Maximum reverse recovery

instantaneous power

—

≤ 2200 V

di/dt ≤ 4800 A/µs, T

= 125 °C

[See Fig.1, Fig.2, 12-5]

2100 kW

7. Electrical Characteristics

Limits

Item Symbol Conditions

Min. Typ. Max.

Unit

= 25 °C

— — 5

7.1 Repetitive reverse current I

RRM

= V

RRM

= 125 °C

— 3 30

= 25 °C

— 2.80 —

7.2 Forward voltage V

(Note 1)

= 1200 A

= 125 °C

— 2.70 —

7.3 Reverse recovery time t

— 0.75 — µs

7.4 Reverse recovery current I

— 1600 — A

7.5 Reverse recovery charge Q

— 850 — µC

7.6 Reverse recovery energy E

rec

= 1650 V, I

= 1200 A

di/dt = −3700 A/µs

= 125 °C

[See Fig.1,Fig.2]

— 0.75 — J/P

Note 1: It doesn't include the voltage drop by Internal lead resistance.

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Ch-technology RM1200DB-66S Manuel d'utilisateur Page 3

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