Ch-technology CPV363M4KPbF Manuel d'utilisateur télécharger pdf (Page 9)

CPV363M4KPbF

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Vishay Semiconductors

Revision: 11-Jun-13

Document Number: 94485

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Fig. 18a - Test Circuit for Measurements of I

, E

off(diode)

, t

, Q

, t

d(on)

, t

d(off)

, t

Fig. 18b - Test Waveforms for Circuit of Fig. 18a,

Defining E

off

, t

d(off)

, t

Fig. 18c - Test Waveforms for Circuit of Fig. 18a,

Defining E

, t

d(on)

, t

Fig. 18d - Test Waveforms for Circuit of Fig. 18a,

Defining E

rec

, t

, Q

, I

Fig. 18e - Macro Waveforms for Figure 18a’s Test Circuit

Same type

device as

D.U.T.

430 µF

80 %

of V

Vce

90% Ic

10% Vce

td(off)

5% Ic

t1+5μS

Vce ic dt

90% Vge

+Vge

∫

Eoff =

Vce Ic dt

∫

Vce ie dt

5% Vce

Ipk

Vcc

10% Ic

Vce

DUT VOLTAGE

AND CURRENT

GATE VOLTAGE D.U.T.

+Vg

10% +Vg

90% Ic

td(on)

Eon =

Vce Ic dt

DIODE REVERSE

RECOVERY ENERGY

∫

Erec =

Vd id dt

DIODE RECOVERY

WAVEFORMS

Vpk

10% Vcc

Irr

10% Irr

Vcc

trr

∫

Qrr =

trr

id dt

Vd Ic dt

Ic dt

GATE SIGNAL

DEVICE UNDER TES

CURRENT D.U.T.

VOLTAGE IN D.U.T.

CURRENT IN D1

1 2 3 4 5 6 7 8 9 10 11 12

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Ch-technology CPV363M4KPbF Manuel d'utilisateur Page 9

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