
Dual IGBTMOD™
HVIGBT Module
1200 Amperes/1700 Volts
CM1200DB-34N
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
1
01/11 Rev. 0
Outline Drawing and Circuit Diagram
A
DD
F
E
C
42
3
E1
E2
G1 G2
C1 C2
1
B
GAB
AA
Z
H
N
T
R
4(E1)
3(C1)
2(C2)
1(E2)
C1
G1
E1
E2
G2
C2
P
Q
S
J
Q
U
W
V
Y
X
K (4 TYP)
M (3 TYP)
L
(6 PLACES)
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half-
bridge configuration with each
transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
Features:
£ Low Drive Power
£ Low V
CE(sat)
£ Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ Traction
£ Medium Voltage Drives
£ High Voltage Power Supplies
Ordering Information:
Example: Select the complete
part module number you desire
from the table below -i.e.
CM1200DB-34N is a 1700V
(V
CES
), 1200 Ampere Dual
IGBTMOD™ Power Module.
Type Current Rating
V
CES
Amperes Volts (x 50)
CM 1200 34
Dimensions Inches Millimeters
A 5.12±0.02 130.0±0.5
B 5.51±0.02 140.0±0.5
C 4.88±0.01 124.0±0.25
D 2.24±0.01 57.0±0.25
E 1.18±0.008 30.0±0.2
F 0.79±0.004 20.0±0.1
G 2.09±0.008 53.0±0.2
H 1.57±0.008 40.0±0.2
J 1.73±0.008 44.0±0.2
K M8 Metric M8
L 0.28 Dia. 7.0 Dia.
M M4 Metric M4
N 2.17±0.01 55.2±0.3
Dimensions Inches Millimeters
P 1.50+0.04/-0.0 38.0+1.0/-0.0
Q 0.2±0.008 5.0±0.2
R 0.65 Min. 16.5 Min.
S 0.30 Min. 7.7 Min.
T 0.47±0.008 11.85±0.2
U 1.16±0.02 29.5±0.5
V 0.45±0.008 11.5±0.2
W 0.55±0.008 14.0±0.2
X 1.10+0.04/-0.0 28.0+1.0/-0.0
Y 1.38±0.008 35.0±0.2
Z 0.63±0.008 16.0±0.2
AA 0.71±0.008 18.0±0.2
AB 2.24±0.008 57.0±0.2
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